AP6800GEO mosfet equivalent, n-channel enhancement mode power mosfet.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 G1 G2 D2
S1
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID.
Image gallery
TAGS
Download (Size : 106.14KB)